The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 .Zhiqiang Li
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Author: Zhiqiang Li
Number of Pages: 73 pages
Published Date: 08 Jul 2016
Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Publication Country: Berlin, Germany
Language: English
ISBN: 9783662496817
File Name: The.Source.Drain.Engineering.of.Nanoscale.Germanium-Based.MOS.Devices.2016.pdf
Download Link: The Source Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016
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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8x10-7OMEGA*cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Read online The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 Buy and read online The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 Download The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 ebook, pdf, djvu, epub, mobi, fb2, zip, rar, torrent Download to iPad/iPhone/iOS, B&N nook The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 ebook, pdf, djvu, epub, mobi, fb2, zip, rar, torrent
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Author: Zhiqiang Li
Number of Pages: 73 pages
Published Date: 08 Jul 2016
Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Publication Country: Berlin, Germany
Language: English
ISBN: 9783662496817
File Name: The.Source.Drain.Engineering.of.Nanoscale.Germanium-Based.MOS.Devices.2016.pdf
Download Link: The Source Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016
---------------------------------------------------------------
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8x10-7OMEGA*cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Read online The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 Buy and read online The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 Download The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 ebook, pdf, djvu, epub, mobi, fb2, zip, rar, torrent Download to iPad/iPhone/iOS, B&N nook The Source/Drain Engineering of Nanoscale Germanium-Based MOS Devices 2016 ebook, pdf, djvu, epub, mobi, fb2, zip, rar, torrent
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